Hd 2n60 datasheet pdf

General description product summary vds id at v gs 10v 40a r dson at v gs 10v sheet, datasheet, data sheet, pdf. Aa electrical characteristics tj 25, unless otherwise specified parameter symbol test conditions min typ max unit. The utc 4n60 is a high voltage power mosfet and is designed to have better characteristics, such as. B1 igbt sgh80n60ufd sgh80n60ufd ultrafast igbt general description fairchilds ufd series of insulated gate bipolar transistors igbts provides low conduction and switching losses. En7881a monolithic linear ic tv and crt display vertical output ic with bus control support. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching. Utc, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Ultralow v cesat igbt ixgn 60n60 v ces 600 v i c25 100 a v cesat 1. G80n60 datasheet vces 660v, ultrafast igbt fairchild, sgh80n60ufd datasheet, g80n60 pdf, g80n60 pinout, g80n60 equivalent, circuit, g80n60 schematic. R ge 1 m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c 25 c 100 a i c90 t c 90 c60a i cm t c 25 c, 1 ms 200 a ssoa v ge 15 v, t vj 125 c, r g. Fqp8n60cfqpf8n60c 600v nchannel mosfet general description these nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar stripe, dmos technology.

The utc 4n60 is a high voltage mosfet and is designed to have better characteristics, such as fast switching time, low gate charge, low onstate resistance. Please note the new package dimensions arccording to pcn. G80n60 datasheet vces 660v, ultrafast igbt fairchild. These devices consist of an internal temperature compensated reference, comparator.

Ixys low vcesat igbt, high speed igbt,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Como fazer um amplificador com qualquer transistor youtube. Operation beyond the limits set forth in the above table, operating freeair. Id 20 a feature new revolutionary high voltage technology ultra. Fairchild 600v nchannel mosfet,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Ixgh40n60a datasheet, ixgh40n60a datasheets, ixgh40n60a pdf, ixgh40n60a circuit. Please note the new package dimensions arccording to pcn 2009. Monolithic linear ic la78045 tv and crt display vertical. General description product summary vds id at v gs 10v 40a r dson at v gs 10v hd 600v 600a 2p. Germanium glass diode 1n601n60p taitron components. Mc34063a, mc33063a, sc34063a, sc33063a, ncv33063a inverting regulator buck, boost, switching 1.

The ufd series is designed for applications such as motor. Oct 01, 2015 y2010dn datasheet pdf, y2010dn datasheet, y2010dn pdf, y2010dn pinout, y2010dn data, circuit, ic, manual, substitute, parts, schematic, reference. Apr 04, 2015 4n60 datasheet pdf 4n60 datasheet pdf 4n60 datasheet pdf download. Fqa24n60 600v nchannel mosfet general description these nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar stripe, dmos technology. Download fairchild semiconductor 2n60b pdf datasheet file. Utc, alldatasheet, datasheet, datasheet search site for electronic. Recent listings manufacturer directory get instant. On semiconductor is a leading supplier of semiconductorbased solutions, offering a comprehensive portfolio of energy efficient power management, analog, sensors, logic, timing, connectivity, discrete, soc and custom devices. Hdo4000 high definition oscilloscopes combine teledyne lecroys hd4096 high definition technology with long memory, powerful debug tools and mixed signal capability in a compact form factor with a 12.

Jun 26, 2017 g80n60 datasheet vces 660v, ultrafast igbt fairchild, sgh80n60ufd datasheet, g80n60 pdf, g80n60 pinout, g80n60 equivalent, circuit, g80n60 schematic. Utc 4 amps, 600 volts nchannel power mosfet,alldatasheet, datasheet, datasheet search site for. Como fazer um amplificador com qualquer transistor. Aa absolute maximum ratings tc 25, unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v avalanche current note 2 iar 2. Description the utc 2n60 is a high voltage power mosfet and is designed to have better characteristics, such as fast switching time, low gate charge, low onstate resistance and have a high rugged avalanche characteristics. Absolute maximum ratings are those values beyond which the device. Ics for audio common use an5270 technical information continued structure of preamp. The compact hd50 and hd100 models work seamlessly with vidyomobile and vidyodesktop as well as other vidyoroom and vidyopanorama systems. This advanced technology has been especially tailored to minimize. Hdo4000 high definition oscilloscopes teledyne lecroy. Datasheet search engine for electronic components and semiconductors. Vishay ir receiver modules for remote control systems,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. I absolute maximum ratings tc 25, unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v continuous id 20 a drain current pulsed idm 80 a avalanche energy single pulsednote 2 eas 1200 mj to247 370.

O absolute maximum ratings tc25c unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v avalanche current note 2 iar 10 a drain current continuous id 10 a pulsed note 2 idm 38 a avalanche energy. Id 20 a feature new revolutionary high voltage technology ultra low gate charge. Utc 2 amps, 600 volts nchannel mosfet,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. E 0a s 173a 01 a ha 10b hb lo c he 0d hd e s 1738 02. Y2010dn datasheet pdf, y2010dn datasheet, y2010dn pdf, y2010dn pinout, y2010dn data, circuit, ic, manual, substitute, parts, schematic, reference. These nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar, dmos technology. Please contact the renesas sales office to check the state of production before ordering the product.

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